型号:

HUFA76413DK8T

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CHAN 60V 4.8A SO-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
HUFA76413DK8T PDF
产品变化通告 Product Discontinuation 14/Mar/2011
产品目录绘图 Power MOSFET, 8-SOP, SO-8
标准包装 2,500
系列 UltraFET™
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 5.1A
开态Rds(最大)@ Id, Vgs @ 25° C 49 毫欧 @ 5.1A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 23nC @ 10V
输入电容 (Ciss) @ Vds 620pF @ 25V
功率 - 最大 2.5W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 SO-8
包装 带卷 (TR)
其它名称 HUFA76413DK8T-ND
HUFA76413DK8TTR
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